High-power GaN diode-pumped continuous wave Pr3+-doped LiYF4 laser

High-power GaN diode-pumped continuous wave Pr3+-doped LiYF4 laser
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DOI：
10.1364/ol.32.002493
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发表时间：
2007-09
期刊：
2007 European Conference on Lasers and Electro-Optics and the International Quantum Electronics Conference
影响因子：
--
通讯作者：
K. Hahimoto;F. Kannari
K. Hahimoto;F. Kannari
中科院分区：
其他
文献类型：
--
作者：
K. Hahimoto;F. Kannari

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仅提供摘要形式。在这项研究中，Pr3+掺杂LiYF4激光器，由高功率444 nm GaN激光器泵浦。研究了不同耦合方式下激光输出功率与吸收功率的关系。即使在高达380 K的升高的晶体温度下也没有观察到性能下降。
Summary form only given. In this study, Pr3+-doped LiYF4 laser, was pumped by a high-power 444 nm GaN laser. The laser output power as a function of absorbed power for various output couplings was studied. No performance degradation was observed even at elevated crystal temperatures up to 380 K.