Optical Emission Spectroscopy Measurement of Ar\H2\CH4 RF Plasma for Nano-Crystal Diamond Film Deposition
Optical Emission Spectroscopy Measurement of Ar\H2\CH4 RF Plasma for Nano-Crystal Diamond Film Deposition
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DOI：
10.4028/www.scientific.net/amr.1035.373
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发表时间：
2014-10
期刊：
影响因子：
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通讯作者：
Yanqiao Shi;Qin Jian Zhang;Jia Jun Li;Guang-chao Chen
中科院分区：
文献类型：
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作者：
Yanqiao Shi;Qin Jian Zhang;Jia Jun Li;Guang-chao Chen
利用Ar\H2\CH4混合气体在射频等离子体增强CVD系统中生长纳米晶金刚石薄膜。改变CH4\ H2比值，研究等离子体自由基对镀层的影响，并利用发射光谱（OES）对等离子体自由基进行分析。结果表明，血浆中主要自由基为Hα、Hβ、Hγ、CH、C2。其中，OES的CH强度通常较强，当CH4/H2比大于3%时，OES的CH强度急剧增加。C2的强度较弱，随甲烷的加入基本不变。该研究为沉积NCD薄膜提供了一种新的可能的技术应用。
Ar\H2\CH4 gas mixture was utilized to grow nanocrystal diamond films in a RF plasma enhanced CVD system. CH4\ H2 ratios were changed to study the effect of plasma radicals on the deposit, in which optical emission spectroscopy (OES) was applied to analyze the plasma radicals. It was found that Hα, Hβ, Hγ, CH, C2 were the main radicals in the plasma. Among them, the CH intensity of OES was usually quite strong and increased sharply when the ratio of CH4/H2 was greater than 3%. The intensity of C2 was weak and basically unchanged with the addition of methane. This study can provide a new possible technical application for depositing NCD films.