The influence of the growth temperature and interruption time on the crystal quality of InGaAs/GaAs QW structures grown by MBE and MOCVD methods
The influence of the growth temperature and interruption time on the crystal quality of InGaAs/GaAs QW structures grown by MBE and MOCVD methods
复制标题
DOI：
10.1016/j.jcrysgro.2008.02.018
复制
发表时间：
2008-05
影响因子：
1.8
通讯作者：
A. Jasik;A. Wnuk;A. Wójcik-Jedlinska;R. Jakieła;J. Muszalski;W. Strupinski;M. Bugajski
中科院分区：
文献类型：
--
作者：
A. Jasik;A. Wnuk;A. Wójcik-Jedlinska;R. Jakieła;J. Muszalski;W. Strupinski;M. Bugajski
