CRYSTALLITE GROWTH IN GRAPHITIZING AND NON-GRAPHITIZING CARBONS
CRYSTALLITE GROWTH IN GRAPHITIZING AND NON-GRAPHITIZING CARBONS
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DOI：
10.1098/rspa.1951.0197
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发表时间：
1951-01-01
影响因子：
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通讯作者：
FRANKLIN, RE
中科院分区：
文献类型：
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作者：
FRANKLIN, RE
在1000至3000°C之间的温度下处理的不同来源的碳的结构的研究已经表明，石墨化和非石墨化碳形成两种不同且明确定义的类别。结构上的差异从碳化的最早阶段就很明显，并且可能主要归因于在低温下在非石墨化碳中形成了将微晶结合在一起的强交联体系。这导致了一个随机取向的thè微晶在一个刚性的，精细多孔的质量。在石墨化碳中，交联弱得多，结构更紧凑，并且相邻的微晶具有位于几乎平行取向的强烈倾向。结果表明，微晶生长发生的整个层平面，甚至层平面组的逐渐位移。石墨化碳中存在的预取向促进了这一过程，使得层平面的重排能够通过小阶段发生。它是石墨化碳中有利于微晶生长的主要因素。在非石墨化碳中，微晶生长受到相邻微晶之间的强交联和它们的随机取向的阻碍。
An investigation of the structure of carbons of different origin treated at temperatures between 1000 and 3000°C has shown that the graphitizing and non-graphitizing carbons form two distinct and well-defined classes. The differences in structure are apparent from the earliest stages of carbonization, and may be attributed mainly to the formation at low temperatures, in the non-graphitizing carbons, of a strong system of cross-linking uniting the crystallites. This leads to a random orientation of thè crystallites in a rigid, finely porous mass. In the graphitizing carbons the cross-linking is much weaker, the structure is more compact, and neighbouring crystallites have a strong tendency to lie in nearly parallel orientation. It is shown that crystallite growth occurs by the gradual displacement of whole layer-planes or even of groups of layer-planes. The pre-orientation existing in the graphitizing carbons facilitates this process, enabling the rearrangement of the layer-planes to take place by small stages. It is the principal factor favouring crystallite growth in the graphitizing carbons. In the non-graphitizing carbons crystallite growth is impeded both by the strong cross-linking between neighbouring crystallites and by their random orientation.