Ultralong spin lifetimes in one-dimensional semiconductor nanowires
Ultralong spin lifetimes in one-dimensional semiconductor nanowires
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DOI：
10.1063/1.5096970
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发表时间：
2018-09
影响因子：
4
通讯作者：
F. Dirnberger;M. Kammermeier;J. Konig;M. Forsch;P. E. F. Junior;T. Campos;J. Fabian;J. Schliemann;C. Schuller;T. Korn;Paul Thomas Wenk;D. Bougeard
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文献类型：
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作者：
F. Dirnberger;M. Kammermeier;J. Konig;M. Forsch;P. E. F. Junior;T. Campos;J. Fabian;J. Schliemann;C. Schuller;T. Korn;Paul Thomas Wenk;D. Bougeard
我们通过实验证明了半导体纳米线一维量子极限下电子的超长自旋寿命。对不同直径单线的光学探测显示，随着电子变得越来越受限，直到热化后只填充一个一维子带，自旋弛豫时间增加了几个数量级。我们发现观察到的超过200 ns的自旋寿命是由于1D电子对主要自旋弛豫机制的鲁棒性，突出了这些导线在相干自旋信息的远程输运方面的潜力。我们通过实验证明了半导体纳米线一维量子极限下电子的超长自旋寿命。对不同直径单线的光学探测显示，随着电子变得越来越受限，直到热化后只填充一个一维子带，自旋弛豫时间增加了几个数量级。我们发现观察到的超过200 ns的自旋寿命是由于1D电子对主要自旋弛豫机制的鲁棒性，突出了这些导线在相干自旋信息的远程输运方面的潜力。
We experimentally demonstrate ultralong spin lifetimes of electrons in the one-dimensional (1D) quantum limit of semiconductor nanowires. Optical probing of single wires of different diameters reveals an increase in the spin relaxation time by orders of magnitude as the electrons become increasingly confined until only a single 1D sub-band is populated after thermalization. We find the observed spin lifetimes of more than 200 ns to result from the robustness of 1D electrons against major spin relaxation mechanisms, highlighting the promising potential of these wires for long-range transport of coherent spin information.We experimentally demonstrate ultralong spin lifetimes of electrons in the one-dimensional (1D) quantum limit of semiconductor nanowires. Optical probing of single wires of different diameters reveals an increase in the spin relaxation time by orders of magnitude as the electrons become increasingly confined until only a single 1D sub-band is populated after thermalization. We find the observed spin lifetimes of more than 200 ns to result from the robustness of 1D electrons against major spin relaxation mechanisms, highlighting the promising potential of these wires for long-range transport of coherent spin information.