Carrier densities of Sn-doped In 2O 3 nanoparticles and their effect on X-ray photoelectron emission
Carrier densities of Sn-doped In 2O 3 nanoparticles and their effect on X-ray photoelectron emission
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Sn掺杂In 2O 3 纳米粒子的载流子密度及其对X射线光电子发射的影响
DOI：
10.1063/1.5096364
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发表时间：
2019
影响因子：
3.2
通讯作者：
Y. Shigesato
中科院分区：
文献类型：
--
作者：
J. Jia;Ai Takaya;T. Yonezawa;K. Yamasaki;H. Nakazawa;Y. Shigesato
采用液相共沉淀法成功制备了不同锡掺杂浓度的锡掺杂铟氧化锡纳米颗粒。与溅射ITO薄膜类似，Sn掺杂在10at时达到最大载流子密度（1.52 × 10 21 cm−3）。%，这是基于扫描椭偏仪（SE）模拟从体等离子体能量估计的。有趣的是，In三维核能级的x射线光电子发射光谱（XPS）显示出一个清晰的不对称峰，在高结合能的一侧有一个肩，这可能与表面等离子体或等离子体耦合的影响有关。我们的研究结果表明，结合SE模拟和XPS测量有效地为理解透明导电氧化物纳米颗粒的体等离子体激元和表面等离子体激元之间的差异提供了一种新的方法。
Sn-doped In 2 O 3 (ITO) nanoparticles with various Sn doping concentrations were successfully fabricated using a liquid phase coprecipitation method. Similar to sputtered ITO thin films, Sn doping reaches a maximum carrier density ( 1.52 × 10 21 cm − 3 ) at 10 at. % in ITO nanoparticles, which was estimated from the bulk plasmon energy based on a scanning ellipsometry (SE) simulation. Interestingly, the X-ray photoelectron emission spectra (XPS) of In 3d core levels show a clear asymmetric peak with a shoulder on the high-binding-energy side for degenerated ITO nanoparticles, which may be associated with the influence of the surface plasmon or plasmonic coupling. Our results suggest that combining the SE simulation and XPS measurements effectively provides a new way to understand the difference between bulk plasmons and surface plasmons for transparent conductive oxide nanoparticles.