Spin injection into a ballistic semiconductor microstructure
Spin injection into a ballistic semiconductor microstructure
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自旋注入弹道半导体微结构
DOI：
10.1103/physrevb.67.121310
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发表时间：
2002
影响因子：
3.7
通讯作者：
E. Rashba
中科院分区：
文献类型：
--
作者：
V. Kravchenko;E. Rashba
本文发展了一种适用于玻尔兹曼体系的自旋注入穿过两个铁磁引线之间的弹道半导体的理论。自旋注入系数y被半导体的Sharvin电阻r* N（=（h/e2）（π 2 /SN））所抑制，其中SN是费米面截面。它与铁磁体的扩散电阻r F竞争，并且在没有接触势垒的情况下，y很小，γ <$r F /r* N <<1。有效的自旋注入可以通过接触势垒来确保。给出了结电阻和自旋阀效应的显式表达式。
A theory of spin injection across a ballistic semiconductor embedded between two ferromagnetic leads is developed for the Boltzmann regime. Spin injection coefficient y is suppressed by the Sharvin resistance of the semiconductor r* N (=(h/e 2 )(π 2 /S N ), where S N is the Fermi-surface cross section. It competes with the diffusion resistances of the ferromagnets r F , and y is small, γ∼r F /r* N <<1, in the absence of contact barriers. Efficient spin injection can be ensured by contact barriers. Explicit formulas for the junction resistance and the spin-valve effect are presented.