Room temperature fabrication of p-channel Cu2O thin-film transistors on flexible polyethylene terephthalate substrates
Room temperature fabrication of p-channel Cu2O thin-film transistors on flexible polyethylene terephthalate substrates
复制标题
在柔性聚对苯二甲酸乙二醇酯基板上室温制备 p 沟道 Cu2O 薄膜晶体管
DOI：
10.1063/1.4739524
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发表时间：
2012-07-23
影响因子：
4
通讯作者：
Shao, G.
中科院分区：
文献类型：
--
作者：
Yao, Z. Q.;Liu, S. L.;Shao, G.
研究了生长温度对Cu2O薄膜微结构演变和电输运性能的影响。在室温下制备了具有中等p型半导体特性(霍尔迁移率约为20 cm(2)/vs，空穴浓度约为10(16)cm(-3))的纳米Cu2O薄膜。在室温下，在柔性的聚对苯二甲酸乙二酯衬底上制作了底栅和顶接触p沟道Cu2O薄膜晶体管(TFT)，该晶体管具有优异的传输性能(场效应迁移率接近2.40 cm(2)/vs，电流通断比接近3.96×10(4))。P型Cu2O TFT的低加工温度和良好的电性能表明，它们在高通量和低成本电子产品中具有良好的应用潜力。(C)2012年美国物理研究所。[http://dx.doi.org/10.1063/1.4739524]
The effects of growth temperature on the microstructure evolution and electrical transport properties of Cu2O films were investigated. Nanocrystalline Cu2O films with modest p-type semiconducting properties (Hall mobilities similar to 20 cm(2)/Vs, hole concentrations similar to 10(16) cm(-3)) were successfully prepared at room temperature without post-annealing. Bottom gate and top contact p-channel Cu2O thin-film transistors (TFTs) were constructed on flexible polyethylene terephthalate substrates at room temperature, which shows superior transfer performance (field effect mobility similar to 2.40 cm(2)/Vs and current on/off ratio similar to 3.96 x 10(4)). The low processing temperature and the good electrical performance of the p-type Cu2O TFTs suggest their good potential for applications in high-throughput and low-cost electronics. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4739524]