Dynamic RON Free 1.2-kV Vertical GaN JFET
Dynamic RON Free 1.2-kV Vertical GaN JFET
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DOI：
10.1109/ted.2023.3338140
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发表时间：
2024-01
影响因子：
3.1
通讯作者：
Xin Yang;Ruizhe Zhang;Bixuan Wang;Q. Song;Andy Walker;S. Pidaparthi;Cliff Drowley;Yuhao Zhang-Yuhao
中科院分区：
文献类型：
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作者：
Xin Yang;Ruizhe Zhang;Bixuan Wang;Q. Song;Andy Walker;S. Pidaparthi;Cliff Drowley;Yuhao Zhang-Yuhao
由电荷捕获引起的动态导通电阻 ( ${R}_{\text {on}}{)}$ 或阈值电压 ( ${V}_{\text {TH}}{)}$ 不稳定是某些氮化镓 (GaN) 高电子迁移率晶体管 (HEMT) 最重要的可靠性问题之一。目前尚不清楚是否可以使用替代的 GaN 器件架构来解决这个问题。这项工作通过首次表征工业垂直 GaN 晶体管（NexGen 的 1200-V/70-$\text{m}\Omega$ 鳍式沟道结栅场效应晶体管 (JFET)（在 100 毫米体 GaN 基板上制造）的动态 ${R} _{\text {ON}}$ 和 ${V}_{\text {TH}}$ 稳定性来回答这个问题。部署电路设置用于稳态切换下动态 ${R}_{\text {on}}$ 的原位测量。 ${R}_{\text {on}}$ 和 ${V}_{\text {TH}}$ 的长期稳定性在负栅极偏压和高漏极偏压的长期应力下进行了测试。在这些测试中，垂直 GaN JFET 几乎没有显示 ${R}_{\text {on}}$ 或 ${V}_{\text {TH}}$ 偏移，这可能归因于 GaN-on-GaN 同质外延生长的缺陷密度低、表面附近不存在拥挤的电场（${E}$ -场）以及本征结栅极中的电荷俘获最少。这些结果代表了垂直 GaN 器件走向电力电子应用的一个重要里程碑。
Dynamic ON-resistance ( ${R}_{\text {on}}{)}$ or threshold voltage ( ${V}_{\text {TH}}{)}$ instability caused by charge trapping is one of the most crucial reliability concerns of some gallium nitride (GaN) high-electron mobility transistors (HEMTs). It has been unclear if this issue can be resolved using an alternative GaN device architecture. This work answers this question by characterizing, for the first time, the dynamic ${R} _{\text {ON}}$ and ${V}_{\text {TH}}$ stability of an industrial vertical GaN transistor-NexGen’s 1200-V/70- $\text{m}\Omega $ fin-channel junction-gate field-effect transistor (JFET), fabricated on 100-mm bulk GaN substrates. A circuit setup is deployed for the in situ measurement of the dynamic ${R}_{\text {on}}$ under steady-state switching. The longer term stability of ${R}_{\text {on}}$ and ${V}_{\text {TH}}$ is tested under the prolonged stress of negative gate bias and high drain bias. The vertical GaN JFET shows nearly no ${R}_{\text {on}}$ or ${V}_{\text {TH}}$ shift in these tests, which could be attributed to the low defect density of the GaN-on-GaN homoepitaxial growth, the absence of electric field ( ${E}$ -field) crowding near the surface, and the minimal charge trapping in the native junction gate. These results present a critical milestone for vertical GaN devices toward power electronics applications.