Preparation and characteristics of ZnS thin films by intense pulsed ion beam
Preparation and characteristics of ZnS thin films by intense pulsed ion beam
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强脉冲离子束ZnS薄膜的制备及特性
DOI：
10.1063/1.340044
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发表时间：
1988
影响因子：
3.2
通讯作者：
K. Yatsui
中科院分区：
文献类型：
--
作者：
Y. Shimotori;M. Yokoyama;Hironobu Isobe;S. Harada;K. Masugata;K. Yatsui
本文提出了一种利用强脉冲离子束（1mev, 80ns）制备ZnS薄膜的沉积系统。最大光束功率密度（~ 5 GW/cm2）集中在ZnS上，因此很容易产生高温等离子体。由Zn和S组成的等离子体在室温下膨胀沉积在衬底上。为制备具有六边形结构的多晶ZnS薄膜提供了明确的证据。沉积速率估计为~ 108 A/s，比其他方法高出几个数量级。
A new deposition system has been developed for the preparation of ZnS thin films by an intense pulsed ion beam (1 MeV, 80 ns). The maximum beam‐power density of ∼5 GW/cm2 is concentrated on ZnS, so that a high‐temperature plasma is easily produced. The plasma composed of Zn and S expands to be deposited onto a substrate kept at room temperature. Clear evidence has been obtained on the production of polycrystalline ZnS thin films with hexagonal structure. The deposition rate is estimated to be ∼108 A/s, which is several orders of magnitude higher than with any other method.