Noise Performance of Sub-100-nm Metamorphic HEMT Technologies
Noise Performance of Sub-100-nm Metamorphic HEMT Technologies
复制标题
亚 100 纳米变质 HEMT 技术的噪声性能
DOI：
10.1109/ims30576.2020.9223783
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
O. Ambacher
中科院分区：
文献类型：
--
作者：
F. Heinz;F. Thome;A. Leuther;O. Ambacher
本文报道了室温下InGaAs变质型高电子迁移率晶体管的小信号和噪声模型。研究了栅长分别为100 nm、50 nm和35 nm的三种工艺，并对不同器件中产生噪声的机理进行了建模。已经在一家铸造厂进行规模和加工的技术使用相同的模型拓扑进行建模，从而实现了最大的相似性。通过这种方式，可以对引起亚100 nm HEMT噪声的影响进行一致的比较。结果表明，沟道噪声的增加与栅漏电流的增加相结合，导致噪声系数不能像预期的那样在栅长达到超短时得到改善。
This paper reports the small-signal and noise modeling of InGaAs metamorphic high-electron-mobility transistors at room temperature. Three technologies with gate length of 100 nm, 50 nm, and 35 nm are investigated and the mechanisms causing noise in the different devices are modeled. Technologies that have been scaled and processed in one foundry are modeled with the same model topology which allows for maximal comparability. In this way, a consistent comparison of the effects causing noise in sub-100 nm HEMTs is possible. It is shown that an increase of the channel noise in combination with increased gate leakage currents causes the noise figure to not improve as expected when scaling to ultra short gate length.