Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes
Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes
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DOI：
10.1063/1.5047531
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发表时间：
2018-09
影响因子：
3.2
通讯作者：
R. Rounds;B. Sarkar;T. Sochacki;M. Boćkowski;Masayuki Imanishi;Y. Mori;R. Kirste;R. Collazo;Z. Sitar
中科院分区：
文献类型：
--
作者：
R. Rounds;B. Sarkar;T. Sochacki;M. Boćkowski;Masayuki Imanishi;Y. Mori;R. Kirste;R. Collazo;Z. Sitar
使用3ω方法分析了不同技术生长的GaN晶体在30 K至295 K温度范围内的热导率。氨热法生长的GaN晶片在室温下表现出显着的热导率变化，其值范围在164 W m−1 K−1和196 W m−1 K−1之间。用钠熔剂和氢化物气相外延方法生产的 GaN 晶体在室温下分别显示出 211 W m−1 K−1 和 224 W m−1 K−1 的结果。使用二次离子质谱分析表明各个晶体之间的杂质含量不同，并解释了样品中热导率趋势的行为。观察到的热导率曲线之间的差异表明，在研究的温度范围内，点缺陷处声子的散射主导着 GaN 的热导率。模型曲线与热导率测量值的偏差以及建模特征长度与实际样品厚度之间的差异表明声子共振在 GaN 中活跃。在 30 K 至 295 K 的温度范围内，使用 3ω 方法分析了通过不同技术生长的 GaN 晶体的热导率。通过氨热法生长的 GaN 晶片在室温下表现出显着的热导率变化，其值范围在 164 W m−1 K−1 和 196 W 之间m−1 K−1。用钠熔剂和氢化物气相外延方法生产的 GaN 晶体在室温下分别显示出 211 W m−1 K−1 和 224 W m−1 K−1 的结果。使用二次离子质谱分析表明各个晶体之间的杂质含量不同，并解释了样品中热导率趋势的行为。观察到的热导率曲线之间的差异表明，在研究的温度范围内，点缺陷处声子的散射主导着 GaN 的热导率。模型曲线与热导率测量值的偏差以及建模特征长度与实际样本之间的差异...
The thermal conductivity of GaN crystals grown by different techniques is analyzed using the 3ω method in the temperature range of 30 K to 295 K. GaN wafers grown by the ammonothermal method show a significant variation in thermal conductivity at room temperature with values ranging between 164 W m−1 K−1 and 196 W m−1 K−1. GaN crystals produced with the sodium flux and hydride vapor phase epitaxy methods show results of 211 W m−1 K−1 and 224 W m−1 K−1, respectively, at room temperature. Analysis using secondary ion mass spectrometry indicates varying amounts of impurities between the respective crystals and explains the behavior of thermal conductivity trends in the samples. The observed difference between thermal conductivity curves suggests that scattering of phonons at point defects dominates the thermal conductivity of GaN within the investigated temperature range. Deviations of model curves from thermal conductivity measurements and disparities between modelled characteristic lengths and actual sample thicknesses indicate that phonon resonances are active in GaN.The thermal conductivity of GaN crystals grown by different techniques is analyzed using the 3ω method in the temperature range of 30 K to 295 K. GaN wafers grown by the ammonothermal method show a significant variation in thermal conductivity at room temperature with values ranging between 164 W m−1 K−1 and 196 W m−1 K−1. GaN crystals produced with the sodium flux and hydride vapor phase epitaxy methods show results of 211 W m−1 K−1 and 224 W m−1 K−1, respectively, at room temperature. Analysis using secondary ion mass spectrometry indicates varying amounts of impurities between the respective crystals and explains the behavior of thermal conductivity trends in the samples. The observed difference between thermal conductivity curves suggests that scattering of phonons at point defects dominates the thermal conductivity of GaN within the investigated temperature range. Deviations of model curves from thermal conductivity measurements and disparities between modelled characteristic lengths and actual sampl...