Fabrication and characterization of Cu2O, ZnO and ITO thin films toward oxide thin film solar cell by mist chemical vapor deposition method
Fabrication and characterization of Cu2O, ZnO and ITO thin films toward oxide thin film solar cell by mist chemical vapor deposition method
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DOI：
10.1002/pssc.201300638
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发表时间：
2014-07
期刊：
影响因子：
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通讯作者：
Takumi Ikenoue;S. Sakamoto;Y. Inui
中科院分区：
文献类型：
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作者：
Takumi Ikenoue;S. Sakamoto;Y. Inui
采用超声喷雾辅助雾化化学气相沉积（mist CVD）法制备了n型氧化锌（ZnO）和p型氧化亚铜（Cu 2 O）薄膜。用同样的方法制备了掺镓氧化锌（ZnO：Ga）和氧化铟锡（ITO）透明导电薄膜。ZnO薄膜具有n型导电性，载流子浓度为3.6 × 1019 cm-3，迁移率为8.6cm2/V·s。Cu 2 O薄膜具有p型导电性，载流子密度和迁移率分别为3.3 × 1015 cm-3和0.20cm2/V·s。ZnO：Ga和ITO薄膜在可见光区的透过率均超过85%，电阻率分别为2.3 × 10-3和1.4 × 10-4 Ω·cm。这些性质适用于太阳能电池的透明电极。这一结果鼓励了在玻璃衬底上用相同的工艺技术连续制备ITO（或导电ZnO）、n-ZnO和p-Cu_2 O薄膜的太阳能电池结构。（© 2014 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
N-type zinc oxide (ZnO) and p-type cuprous oxide (Cu2O) thin films were fabricated by an ultrasonic spray-assisted mist chemical vapor deposition (mist CVD) method. The films of transparent conductive gallium-doped ZnO (ZnO:Ga) and indium tin oxide (ITO) were also formed by the same technique. ZnO thin films have showed n-type conductivity with carrier concentration of 3.6 × 1019 cm–3 and mobility of 8.6 cm2/V·s. Cu2O thin films showed p-type conductivity whose carrier density and mobility were 3.3 × 1015 cm–3 and 0.20 cm2/V·s, respectively. ZnO:Ga and ITO thin films have high transmittance over 85% in visible region and low resistivity values of 2.3 × 10–3 and 1.4 × 10–4 Ω·cm, respectively. These properties are suitable for transparent electrodes of solar cells. The results encourage the successive fabrication by the same process technique of solar cell structure, that is, the multilayer structure of ITO (or conductive ZnO), n-ZnO, and p-Cu2O films on a glass substrate. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)