Phonon-induced many-body renormalization of the electronic properties of graphene.
Phonon-induced many-body renormalization of the electronic properties of graphene.
复制标题
DOI：
10.1103/physrevlett.99.236802
复制
发表时间：
2007-07
影响因子：
8.6
通讯作者：
W. Tse;S. D. Sarma
中科院分区：
文献类型：
--
作者：
W. Tse;S. D. Sarma
我们发展了电子-声子相互作用对石墨烯电子性质影响的理论。我们解析地计算了由声子介导的电子-电子相互作用引起的电子自能、谱函数和能带速度重整化，发现声子介导的电子-电子耦合对石墨烯能带结构重整化有很大的影响。我们的解析理论成功地捕捉了角分辨光电子发射实验中观测到的石墨烯电子光谱的基本特征，预测了在费米能级以下约200 meV处的扭结，以及在实验掺杂水平下约10-20%的带速降低。
We develop a theory for the electron-phonon interaction effects on the electronic properties of graphene. We analytically calculate the electron self-energy, spectral function, and the band velocity renormalization due to phonon-mediated electron-electron interaction, finding that phonon-mediated electron-electron coupling has a large effect on the graphene band structure renormalization. Our analytic theory successfully captures the essential features of the observed graphene electron spectra in the angle-resolved photoemission experiments, predicting a kink at approximately 200 meV below the Fermi level and a reduction of the band velocity by approximately 10-20% at the experimental doping level.