SiGe HBT Technology: Future Trends and TCAD-Based Roadmap
SiGe HBT Technology: Future Trends and TCAD-Based Roadmap
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DOI：
10.1109/jproc.2015.2500024
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发表时间：
2017-06-01
影响因子：
20.6
通讯作者：
Mukherjee, Anindya
中科院分区：
文献类型：
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作者：
Schroeter, Michael;Rosenbaum, Tommy;Mukherjee, Anindya
将各种一维、二维和三维工艺计算机辅助设计(TCAD)仿真工具的结果与几何可扩展的紧凑模型相结合，提出了高速硅锗(SiGe)异质结双极晶体管(HBT)电性能的技术路线图。后者包括所有已知的寄生效应，能够准确确定器件和选定基准电路的品质因数。提出的路线图定义了五个主要技术节点，以典型高频器件结构的最大振荡频率为主要器件设计目标，在各种其他参数的约束下，用于生成掺杂分布和定义横向比例因子。提供了一套广泛且一致的技术和电气参数，以及所获得的比例规则。正在讨论与制造相关的预期挑战和实现预期性能的可能解决方案。希望所提出的路线图不仅对铸造厂和设备制造商有用，而且对电路和系统设计者也有用，从而能够更好地预测SiGe-BiCMOS工艺技术在新的毫米波(毫米波)和太赫兹(THz)应用中的能力。
A technology roadmap for the electrical performance of high-speed silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) is presented based on combining the results of various 1-D, 2-D, and 3-D technology computer-aided design (TCAD) simulation tools with geometry scalable compact modeling. The latter, including all known parasitic effects, enables the accurate determination of the figures of merit for both devices and selected benchmark circuits. The presented roadmap defines five major technology nodes with the maximum oscillation frequency of a typical high-frequency device structure as the main device design target under the constraints of various other parameters for generating the doping profiles and for defining the lateral scaling factors. An extensive and consistent set of technology and electrical parameters is provided along with the obtained scaling rules. The expected fabrication-related challenges and possible solutions for achieving the predicted performance are being discussed. It is hoped that the presented roadmap will be useful not only for foundries and equipment manufacturers but also for circuit and system designers enabling better predictions of the capability of SiGe-BiCMOS process technology for new millimeter-wave (mm-wave) and terahertz (THz) applications.