Electrical and thermal properties of polycrystalline Si thin films with phononic crystal nanopatterning for thermoelectric applications
Electrical and thermal properties of polycrystalline Si thin films with phononic crystal nanopatterning for thermoelectric applications
复制标题
DOI：
10.1063/1.4922198
复制
发表时间：
2015-06
影响因子：
4
通讯作者：
M. Nomura;Y. Kage;D. Müller;D. Moser;O. Paul
中科院分区：
文献类型：
--
作者：
M. Nomura;Y. Kage;D. Müller;D. Moser;O. Paul
在室温下研究了具有二维声子图案化的多晶硅薄膜的电学和热学性质。测量了具有不同圆孔半径的声子晶体纳米结构的电导率和热导率，以系统地研究纳米图案化的影响。在研究的颈尺寸为80nm的电子和声子输运系统中，声子玻璃和电子晶体的概念是有效的。由于热声子的平均自由程比电荷载流子的长，热导率对纳米图案化比电导率更敏感。当声子晶体纳米结构的特征尺寸低于100nm时，与未图案化的薄膜相比，p型掺杂和声子晶体的品质因数ZT值分别为0.065和0.035，增强因子分别为2和4，n型掺杂声子晶体的ZT增强因子更大……
Electrical and thermal properties of polycrystalline Si thin films with two-dimensional phononic patterning were investigated at room temperature. Electrical and thermal conductivities for the phononic crystal nanostructures with a variety of radii of the circular holes were measured to systematically investigate the impact of the nanopatterning. The concept of phonon-glass and electron-crystal is valid in the investigated electron and phonon transport systems with the neck size of 80 nm. The thermal conductivity is more sensitive than the electrical conductivity to the nanopatterning due to the longer mean free path of the thermal phonons than that of the charge carriers. The values of the figure of merit ZT were 0.065 and 0.035, and the enhancement factors were 2 and 4 for the p-doped and n-doped phononic crystals compared to the unpatterned thin films, respectively, when the characteristic size of the phononic crystal nanostructure is below 100 nm. The greater enhancement factor of ZT for the n-doped s...