Precessional switching of a perpendicular anisotropy magneto-tunneling junction without a magnetic field
Precessional switching of a perpendicular anisotropy magneto-tunneling junction without a magnetic field
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DOI：
10.7567/jjap.56.100309
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发表时间：
2017-09
影响因子：
1.5
通讯作者：
J. Drobitch;Ahsanul Abeed;Supriyo Bandyopadhyay
中科院分区：
文献类型：
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作者：
J. Drobitch;Ahsanul Abeed;Supriyo Bandyopadhyay
本文描述了一种在不使用任何磁场的情况下实现双磁各向异性磁隧道结（p-MTJ）的旋进开关的方法。这种开关是通过压控磁各向异性（VCMA）、自旋转移矩（STT）和机械应变来实现的。p-MTJ的软层是磁致伸缩的，并且应变充当有效的平面内磁场，软层的磁化围绕该平面内磁场旋进以完成翻转。设计了一种与交叉结构兼容的、高存储单元密度的双端节能p-MTJ存储单元。
We describe an approach to implement precessional switching of a perpendicular-magnetic-anisotropy magneto-tunneling-junction (p-MTJ) without using any magnetic field. The switching is accomplished with voltage-controlled-magnetic-anisotropy (VCMA), spin transfer torque (STT) and mechanical strain. The soft layer of the p-MTJ is magnetostrictive and the strain acts as an effective in-plane magnetic field around which the magnetization of the soft layer precesses to complete a flip. A two-terminal energy-efficient p-MTJ based memory cell, that is compatible with crossbar architecture and high cell density, is designed.