Atomic-Resolution Imaging of the Optical Near Field Based on the Surface Photovoltage of a Silicon Probe Tip
Atomic-Resolution Imaging of the Optical Near Field Based on the Surface Photovoltage of a Silicon Probe Tip
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DOI：
10.1103/physrevapplied.3.044020
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发表时间：
2015-04
影响因子：
4.6
通讯作者：
Y. Sugawara;J. Yamanishi;T. Tokuyama;Y. Naitoh;Y. Li
中科院分区：
文献类型：
--
作者：
Y. Sugawara;J. Yamanishi;T. Tokuyama;Y. Naitoh;Y. Li
克服光的衍射极限的原子分辨率光学成像是一项具有挑战性的任务。然而，目前还没有实现光场的原子分辨率成像。我们研究了表面光学近场的原子分辨率成像。用该方法测量了硅探针针尖表面光近场感生的表面光电压。我们实现了蓝宝石表面上光学近场的原子分辨率成像。我们观察到表面光电压与针尖-采样距离的强烈依赖关系。这一成功在探索光与原子或分子之间原子尺度的物理化学相互作用方面是一个有希望的发展，并提供了对表面各种光子过程和功能的更深层次的洞察。
Atomic-resolution optical imaging that overcomes the diffraction limit of light is a challenging task. However, atomic-resolution imaging of the optical field has not yet been achieved. We investigate the atomic-resolution imaging of the optical near field on a surface. With this method, the surface photovoltage of the silicon probe tip induced by the optical near field on the surface is measured. We achieve atomic-resolution imaging of the optical near field on a sapphiresurface. We observe the strong tip-sample-distance dependence of the surface photovoltage. This success is a promising development in the exploration of atomic-scale physical and chemical interactions between light and atoms or molecules and offers deeper insight into the various photonic processes and functions on surfaces.