AlxGa1−xN-based avalanche photodiodes with high reproducible avalanche gain
AlxGa1−xN-based avalanche photodiodes with high reproducible avalanche gain
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DOI：
10.1063/1.2724926
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发表时间：
2007-04
影响因子：
4
通讯作者：
T. Tut;M. Gokkavas;A. Inal;E. Ozbay
中科院分区：
文献类型：
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作者：
T. Tut;M. Gokkavas;A. Inal;E. Ozbay
报道了在紫外光照射下雪崩增益高达1560的高性能日盲光探测器。日盲光探测器的截止波长约为276 nm。测得直径为40μm的器件在20V以下的偏置电压下暗电流小于8fA。在20V反向偏压下，该探测器在272 nm处的响应率为0.13A/W。对于直径为40−m的器件，其热极限探测率为D*=1.4x1014cmHz1/2Wμ1。
The authors report high performance solar-blind photodetectors with reproducible avalanche gain as high as 1560 under ultraviolet illumination. The solar-blind photodetectors have a sharp cutoff around 276nm. The dark currents of the 40μm diameter devices are measured to be lower than 8fA for bias voltages up to 20V. The responsivity of the photodetectors is 0.13A∕W at 272nm under 20V reverse bias. The thermally limited detectivity is calculated as D*=1.4×1014cmHz1∕2W−1 for a 40μm diameter device.