Room-Temperature Study of the Magnetic Moment of Ultrathin Fe Films on GaAs
Room-Temperature Study of the Magnetic Moment of Ultrathin Fe Films on GaAs
复制标题
GaAs 上超薄 Fe 薄膜磁矩的室温研究
DOI：
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发表时间：
2006
影响因子：
2.1
通讯作者：
J. Bland
中科院分区：
文献类型：
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作者：
J. Laloe;F. van Belle;A. Ionescu;C. Vaz;M. Tselepi;G. Wastlbauer;R. Dalgliesh;S. Langridge;J. Bland
我们提出了一系列的Fe厚度生长在GaAs和InAs衬底上的磁强计数据，以确定控制因素的演变的外延生长的Fe的磁矩的锌半导体。用分子束外延法在室温下生长了Fe薄膜，对其结构和磁性进行了表征。Fe/GaAs和Fe/InAs界面的粗糙度幅值分别为0.3 ± 0.2nm和0.6 ± 0.2nm。我们观察到一个更大的减少的Fe磁矩的薄膜上生长的InAs相比，GaAs的Fe膜达到一个批量样的时刻（在10%的偏差）在~5.2 nm和~2.2 nm的厚度，分别。结果表明，生长条件，特别是界面和互扩散效应，是影响GaAs和InAs衬底上Fe 2 O3薄膜磁矩大小的主要机制
We present magnetometry data for a range of Fe thicknesses grown on GaAs and InAs substrates in order to determine the factors governing the evolution of the magnetic moment of epitaxial Fe grown on a zinc-blende semiconductor. Fe films grown at room temperature by molecular beam epitaxy were characterized structurally and magnetically. The estimated roughness amplitudes were 0.3plusmn0.2 nm for the Fe/GaAs interface and 0.6plusmn0.2 nm for Fe/InAs. We observe a greater reduction of the Fe magnetic moment for films grown on InAs as compared to GaAs, as the Fe films reach a bulk-like moment (within 10% deviation) at a thickness of ~5.2 nm and ~2.2 nm, respectively. We conclude that the growth conditions, in particular interface and interdiffusion effects, are the dominant mechanisms influencing the value of the magnetic moment for ultrathin Fe films on GaAs and InAs