NVSim-VXs: An improved NVSim for variation aware STT-RAM simulation
NVSim-VXs: An improved NVSim for variation aware STT-RAM simulation
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DOI：
10.1145/2897937.2898053
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发表时间：
2016-06
期刊：
影响因子：
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通讯作者：
Enes Eken;Linghao Song;Ismail Bayram;Cong Xu;Wujie Wen;Yuan Xie;Yiran Chen
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文献类型：
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作者：
Enes Eken;Linghao Song;Ismail Bayram;Cong Xu;Wujie Wen;Yuan Xie;Yiran Chen
自旋转移矩随机存取存储器（STT-RAM）由于其在高速缓存和存储器应用中的良好特性而受到广泛关注。作为一个早期阶段的建模工具，NVSim已被广泛采用的模拟新兴的非易失性存储器技术在计算机体系结构的研究，包括STT-RAM，ReRAM，PCM等在这项工作中，我们介绍了NVSim家族的新成员-NVSim-VX的，它使统计模拟STT-RAM的写性能，错误和能耗。该模型考虑了CMOS和MTJ器件的参数变化以及芯片工作温度的影响。它还使用基于宏磁和SPICE模型的蒙特-卡罗模拟进行校准，覆盖22 nm和90 nm之间的五个技术节点。NVSim-VX有力地支持STT-RAM研究在可靠性分析和增强方面快速增长的需求，宣布了NVSim开发的下一个重要阶段。
Spin-transfer torque random access memory (STT-RAM) recently received significant attentions for its promising characteristics in cache and memory applications. As an early-stage modeling tool, NVSim has been widely adopted for simulations of emerging nonvolatile memory technologies in computer architecture research, including STT-RAM, ReRAM, PCM, etc. In this work, we introduce a new member of NVSim family - NVSim-VXs, which enables statistical simulation of STT-RAM for write performance, errors, and energy consumption. This enhanced model takes into account the impacts of parametric variabilities of CMOS and MTJ devices and the chip operating temperature. It is also calibrated with Monte-Carlo Simulations based on macro-magnetic and SPICE models, covering five technology nodes between 22nm and 90nm. NVSim-VXs strongly supports the fast-growing needs of STT-RAM research on reliability analysis and enhancement, announcing the next important stage of NVSim development.