AC/DC spin and valley Hall effects in silicene and germanene
AC/DC spin and valley Hall effects in silicene and germanene
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DOI：
10.1103/physrevb.87.235426
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发表时间：
2013-06
影响因子：
3.7
通讯作者：
C. J. Tabert;E. Nicol
中科院分区：
文献类型：
--
作者：
C. J. Tabert;E. Nicol
从理论上探讨了硅烯、锗烯和其他类似二维晶体的本征自旋电导率和谷霍尔电导率。特别注意的是给予固有的自旋轨道耦合，电子掺杂，和绝缘相的系统（即，拓扑绝缘体或带绝缘体），其可以通过垂直电场来调谐。在有限频率下，可以控制特定自旋和谷标记的载流子流向的横向边缘，使得可以获得自旋和谷指数的特定组合的累积。流动的方向被发现是依赖于绝缘相的类型。霍尔电导率响应的幅度从与带间跃迁的开始相关联的某些入射光子频率处的DC值增强。分析结果的DC和有限频率的结果。
The intrinsic spin and valley Hall conductivities of silicene, germanene, and other similar two-dimensional crystals are explored theoretically. Particular attention is given to the effects of the intrinsic spin-orbit coupling, electron doping, and the type of insulating phase of the system (i.e., a topological insulator or a band insulator) which can be tuned by a perpendicular electric field. At finite frequency, the transverse edge to which carriers of a particular spin and valley label flow can be controlled such that an accumulation of a particular combination of spin and valley index can be obtained. The direction of flow is found to be dependent on the type of insulating phase. The magnitude of the Hall conductivity response is enhanced from the DC values at certain incident photon frequencies associated with the onset of interband transitions. Analytic results are presented for both the DC and finite-frequency results.