Oxygen-Related Degradation Mechanisms for On- and Off-States of Perfluoropentacene Thin-Film Transistors
Oxygen-Related Degradation Mechanisms for On- and Off-States of Perfluoropentacene Thin-Film Transistors
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DOI：
10.1143/jjap.47.3643
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发表时间：
2008-05
影响因子：
1.5
通讯作者：
T. Yokoyama;C. Park;T. Nishimura;K. Kita;A. Toriumi
中科院分区：
文献类型：
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作者：
T. Yokoyama;C. Park;T. Nishimura;K. Kita;A. Toriumi
我们研究了暴露于干燥 O2 的 n 沟道全氟并五苯薄膜晶体管 (PF-并五苯 TFT) 的性能下降机制。我们发现，PF-并五苯 TFT 在干燥 O2 中工作时比仅暴露在干燥 O2 中时会显着退化。此外，暴露于干氧中导致的性能下降是由迁移率下降引起的，而TFT在干氧中操作时的性能下降是由阈值电压(Vth)增加以及迁移率下降引起的。目前的结果表明，中性 PF-并五苯和 O2 分子之间的相互作用导致迁移率轻微下降，而 n 掺杂 PF-并五苯和 O2 分子之间的相互作用主要导致 Vth 显着增加。
We investigated the performance degradations mechanisms in n-channel perfluoropentacene thin-film transistors (PF-pentacene TFTs) exposed to dry O2. We found that the PF-pentacene TFTs are significantly degraded when they are operated in dry O2 rather than when just exposed to dry O2. Furthermore, the performance degradation resulting from exposure to dry O2 is caused by the mobility decrease, while that with the TFT operation in dry O2 is caused by the threshold voltage (Vth) increase as well as the mobility decrease. The present results indicate that an interaction between neutral PF-pentacene and O2 molecules induces a slight mobility decrease, while that between n-doped PF-pentacene and O2 molecules predominantly brings about a significant Vth increase.