The use of silicon carbide as a tritium permeation barrier
The use of silicon carbide as a tritium permeation barrier
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DOI：
10.1016/0022-3115(94)00623-7
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发表时间：
1995-04
影响因子：
3.1
通讯作者：
R. Causey;W. Wampler
中科院分区：
文献类型：
--
作者：
R. Causey;W. Wampler
气相沉积碳化硅具有非常低的氚扩散率和溶解度。当这些特性与其非常好的热性能相结合时，碳化硅似乎是用于聚变反应堆和其他应用的优异的氚渗透屏障。进行计算以比较裸石墨和涂覆有碳化硅薄层的石墨中的氚保留。涂覆的石墨保留的氚比裸材料少几个数量级。类似的计算表明，涂覆有碳化硅的铍/铜双相结构允许比未涂覆的结构少几个数量级的氚渗透。
Vapor deposited silicon carbide has a very low tritium diffusivity and solubility. When these characteristics are combined with its very good thermal properties, silicon carbide appears to be an excellent tritium permeation barrier for use in fusion reactors and other applications. Calculations were performed to compare the tritium retention in bare graphite and graphite coated with a thin layer of silicon carbide. The coated graphite retained several orders of magnitude less tritium than the bare material. Similar calculations showed a beryllium/copper duplex structure coated with silicon carbide to allow several orders of magnitude less tritium permeation than an uncoated structure.