Efficiency increase of SiC-BJT inverter by driver loss reduction with one-step commutation
Efficiency increase of SiC-BJT inverter by driver loss reduction with one-step commutation
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DOI：
10.1109/ispsd.2014.6856019
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发表时间：
2014-06
期刊：
影响因子：
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通讯作者：
Henry Barth;W. Hofmann
中科院分区：
文献类型：
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作者：
Henry Barth;W. Hofmann
碳化硅双极结晶体管（SiC-BJT）是一种极具发展前景的大功率半导体器件。特别是由于极低的导通压降和高开关速度，它挑战了最先进的器件-硅IGBT。然而，与电压驱动的竞争对手相比，其主要缺点是导通状态下的高驱动器损耗。针对电压源逆变器（VSI）的一步换相，提出了一种降低驱动器损耗的新方法。设计并组装了一种由sic - bjt和sic -二极管组成的“全sic”直流链路逆变器。测量证实，通过使用一步换流代替传统的一步换流，驱动器损耗可以减少一半。这对sic - bjt逆变器的总效率有积极的影响。
Silicon carbide bipolar junction transistors (SiC-BJT) are promising power semiconductor devices for high efficient motor drive inverters. Especially with the very low on-state voltage drop and high switching speed it challenges the state of the art device - the silicon IGBT. The main disadvantage is the high driver loss in on-state compared to its voltage driven competitors, though. With the one-step commutation in voltage source inverters (VSI) a new approach on decreasing driver losses is presented. An “all-SiC” inverter with DC-link consisting of SiC-BJTs and SiC-diodes has been designed and assembled. Measurements confirm that by using one-step commutation instead of the conventional one driver losses can be cut in half. This has a positive impact on total SiC-BJT-inverter efficiency.