Examination of Additive Mobility Enhancements for Uniaxial Stress Combined with Biaxially Strained Si, Biaxially Strained SiGe and Ge Channel MOSFETs
Examination of Additive Mobility Enhancements for Uniaxial Stress Combined with Biaxially Strained Si, Biaxially Strained SiGe and Ge Channel MOSFETs
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DOI：
10.1109/iedm.2007.4419047
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发表时间：
2007-12
期刊：
影响因子：
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通讯作者：
O. Weber;T. Irisawa;T. Numata;M. Harada;N. Taoka;Y. Yamashita;T. Yamamoto;N. Sugiyama;M. Takenaka;S. Takagi
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文献类型：
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作者：
O. Weber;T. Irisawa;T. Numata;M. Harada;N. Taoka;Y. Yamashita;T. Yamamoto;N. Sugiyama;M. Takenaka;S. Takagi
通过对高迁移率通道材料施加机械应力，对单轴和双轴应变添加剂迁移率增强及其物理理解进行了实验研究。对于nmosfet，单轴和双轴拉伸应变在剪切应变下导致的电子迁移率增强中是部分附加的，这是由于导带翘曲导致的有效质量减少。对于pmosfet，发现初始压缩双轴应变可以有效地增强单轴应变中剪切应变分量对空穴迁移率的影响，证明了应变SiGe通道单轴和双轴结合应力的有效性。本文还首次对（001）锗pmosfet的压阻系数进行了实验计算。
Uniaxial and biaxial strain additive mobility enhancements and their physical understandings are experimentally examined by applying mechanical stress to high mobility channel materials. As for nMOSFETs, uniaxial and biaxial tensile strain are partially additive in the electron mobility enhancement due to the conduction band warping and resulting effective mass reduction under shear strain. As for pMOSFETs, it is found that an initial compressive biaxial strain is efficient to boost the impact of the shear strain component in the uniaxial strain on hole mobility, demonstrating the effectiveness in combining uniaxial and biaxial stress for strained SiGe channels. The piezoresistance coefficients for (001) Germanium pMOSFETs are also experimentally evaluated for the first time.