Annealing effect on thermoelectric properties of TiCoSb half-Heusler compound
Annealing effect on thermoelectric properties of TiCoSb half-Heusler compound
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DOI：
10.1016/j.jallcom.2004.11.017
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发表时间：
2005-05
影响因子：
6.2
通讯作者：
T. Sekimoto;K. Kurosaki;H. Muta;S. Yamanaka
中科院分区：
文献类型：
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作者：
T. Sekimoto;K. Kurosaki;H. Muta;S. Yamanaka
采用电弧熔炼法制备了TiCoSb半赫斯勒化合物。我们在1173 K下对铸锭进行了1、3和7天的退火，并在350 ~ 973 K的温度范围内测量了电阻率、热电势和热扩散率。我们发现，随着退火时间的增加，无量纲优值ZT下降。我们认为热电性能的变化来自于两种竞争现象：第一种是由于杂质锑的蒸发而引入的结构无序，第二种是退火对无序效应的改善。
The half-Heusler compound TiCoSb was prepared by arc melting. We annealed the ingot for 1, 3, and 7 days at 1173K, and measured the electrical resistivity, thermoelectric power, and thermal diffusivity in the temperature region from 350 to 973K. We found that the dimensionless figure of merit ZT decreased with increasing annealing period. We have considered that the changes of thermoelectric properties are derived from two competitive phenomena; the first one is the introduction of structural disorder due to evaporation of impurity antimony, and the second one is the improvement of the disorder effect by annealing.