Relationship between physical properties and gas purification in GaN grown by metalorganic vapor phase epitaxy
Relationship between physical properties and gas purification in GaN grown by metalorganic vapor phase epitaxy
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DOI：
10.1016/s0022-0248(98)00584-3
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发表时间：
1998-12
影响因子：
1.8
通讯作者：
M. Forte-Poisson;F. Huet;A. Romann;M. Tordjman;D. Lancefield;E. Pereira;J. Persio;B. Pécz
中科院分区：
文献类型：
--
作者：
M. Forte-Poisson;F. Huet;A. Romann;M. Tordjman;D. Lancefield;E. Pereira;J. Persio;B. Pécz
