PHONON POPULATIONS BY NANOSECOND-PULSED RAMAN-SCATTERING IN SI
PHONON POPULATIONS BY NANOSECOND-PULSED RAMAN-SCATTERING IN SI
复制标题
DOI：
10.1103/physrevb.32.6731
复制
发表时间：
1985-01-01
影响因子：
3.7
通讯作者：
TROTT, GJ
中科院分区：
文献类型：
--
作者：
COMPAAN, A;LEE, MC;TROTT, GJ
自从第一次在脉冲激光条件下对声子群进行时间分辨拉曼研究以来，已经进行了许多连续波拉曼研究，为解释脉冲拉曼数据提供了更好的基础。在这里，我们介绍了新的脉冲拉曼结果，并参考温度相关的共振效应、高载流子密度效应、声子非谐效应和激光诱导应变效应来解释它们。脉冲拉曼数据--斯托克斯与反斯托克斯之比、一阶峰的移动和形状以及二阶光谱--表明存在一个相，在此相中，拉曼信号消失，然后是一个快速冷却的固体，它开始于硅1685K正常熔化温度的300K以内。我们发现在硅的脉冲拉曼研究中的一个主要困难是高温下拉曼强度的降低。
Since the first time-resolved Raman studies of phonon populations under pulsed-laser-annealing conditions, a number of cw Raman studies have been performed which provide a much improved basis for interpreting the pulsed Raman data. Here we present new pulsed Raman results and interpret them with reference to temperature-dependent resonance effects, high-carrier-density effects, phonon anharmonicity, and laser-induced strain effects. The pulsed Raman data—Stokes to anti-Stokes ratios, shift and shape of the first-order peak, and second-order spectra—indicate the existence of a phase in which the Raman signal disappears followed by a rapidly cooling solid which begins within 300 K of the 1685 K normal melting temperature of Si. We identify a major difficulty in pulsed Raman studies in Si to be the decrease in Raman intensity at high temperatures.