Current-injection induced dislocation networks in II–VI laser diodes: bottom-up structures emerging in top-down system
Current-injection induced dislocation networks in II–VI laser diodes: bottom-up structures emerging in top-down system
复制标题
II-VI 族激光二极管中的电流注入诱发位错网络：自上而下系统中出现的自下而上结构
DOI：
10.1049/el:20046226
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发表时间：
2004
影响因子：
1.1
通讯作者：
K. Kondo
中科院分区：
文献类型：
--
作者：
A. Ishibashi;K. Kondo
通过控制桩错的位置和调节pn结中电子空穴注入的量，可以以受控的方式实现自下而上的位错结构和自上而下的二极管结构之间的结构连接。证明了将自下而上的结构与自上而下的系统结合起来的可能性。
By controlling the location of staking faults and adjusting the amount of electron-hole injection in pn-junction, structural connection between a bottom-up structure of dislocations and a top-down structure of diodes can be made in a controlled manner. The possibility of uniting bottom-up structures with top-down system is demonstrated.