Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy.
Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy.
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X 射线光电子能谱测量非极性 A 面 GaN/AlN 和 AlN/GaN 异质结构的能带偏移
DOI：
10.1186/1556-276x-9-470
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发表时间：
2014
影响因子：
--
通讯作者：
Shen B
中科院分区：
文献类型：
--
作者：
Sang L;Zhu QS;Yang SY;Liu GP;Li HJ;Wei HY;Jiao CM;Liu SM;Wang ZG;Zhou XW;Mao W;Hao Y;Shen B
用X射线光电子能谱测量了非极性A面GaN/AlN和AlN/GaN异质结的能带偏移。在非极性GaN/AlN和AlN/GaN异质结中观察到较大的前后不对称性。非极性A面GaN/AlN和AlN/GaN异质结的价带偏移分别为1.33 ± 0.16和0.73 ± 0.16 eV。非极性GaN/AlN和AlN/GaN异质结之间的0.6 eV的大的价带偏移差异被认为是由于非极性异质结覆盖层中的压电应变效应。
The band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterojunctions are measured by X-ray photoemission spectroscopy. A large forward-backward asymmetry is observed in the non-polar GaN/AlN and AlN/GaN heterojunctions. The valence-band offsets in the non-polar A-plane GaN/AlN and AlN/GaN heterojunctions are determined to be 1.33 ± 0.16 and 0.73 ± 0.16 eV, respectively. The large valence-band offset difference of 0.6 eV between the non-polar GaN/AlN and AlN/GaN heterojunctions is considered to be due to piezoelectric strain effect in the non-polar heterojunction overlayers.