Electrochemical growth of CdZnTe thin films
Electrochemical growth of CdZnTe thin films
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DOI：
10.1016/j.matlet.2005.06.040
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发表时间：
2005-12
影响因子：
3
通讯作者：
Anuj Bansal;P. Rajaram
中科院分区：
文献类型：
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作者：
Anuj Bansal;P. Rajaram
通过一步电沉积技术在CVD生长的SnO 2上沉积了宽成分范围内的Cd 1-xZnxTe薄膜（0.2-1 μm厚）。在这项工作中使用的电化学浴由碲与硝酸，氯化镉和氯化锌反应的水溶液，其中乙腈（CH 3CN）作为络合剂添加到组成。光吸收研究，X射线衍射（XRD）和扫描电子显微镜（SEM）的图案表明，薄膜的晶粒尺寸可以控制的沉积电位的装置。当生长电位在−550至−850 mV（w.r.t.）之间变化时，饱和甘汞电极），晶粒尺寸从约1微米减小到纳米范围。
Thin films of Cd1−xZnxTe (0.2–1 μm thick) over a wide compositional range were deposited on CVD grown SnO2by a single step electrodeposition technique. The electrochemical bath used in this work consisted of aqueous solutions of Te reacted with nitric acid, CdCl2and ZnCl2, to which Acetonitrile (CH3CN) was added to act as a complexing agent. Optical absorption studies, X-ray diffraction (XRD) patterns and scanning electron micrographs (SEM) show that the grain size of the films can be controlled by means of the deposition potential. As the growth potential is varied from −550 to −850 mV (w.r.t. a saturated calomel electrode), the grain size decreases from about one micron to the nanometer range.