High-speed waveguide-integrated Ge/Si avalanche photodetector
High-speed waveguide-integrated Ge/Si avalanche photodetector
复制标题
高速波导集成Ge/Si雪崩光电探测器
DOI：
10.1088/1674-1056/25/5/058503
复制
发表时间：
2016
影响因子：
1.7
通讯作者：
Wang Qiming
中科院分区：
文献类型：
--
作者：
Cong Hui;Xue Chunlai;Liu Zhi;Li Chuanbo;Cheng Buwen;Wang Qiming
采用CMOS兼容工艺在8英寸SOI衬底上设计并制造了波导集成的Ge/Si异质结构雪崩光电探测器（APD）。APD的结构设计为分别以锗和硅作为吸收区和倍增区的分离吸收电荷倍增（SACM）结构。这种器件的击穿电压（V B）在反向偏置时为19 V，在V B的90%时暗电流为0.71 μA。Ge层长10 μm，宽7 μm的器件在1550 nm波长处的最大3dB带宽为17.8GHz。对于Ge区长度为30 μ m的器件，增益带宽积达到325 GHz。
Waveguide-integrated Ge/Si heterostructure avalanche photodetectors (APDs) were designed and fabricated using a CMOS-compatible process on 8-inch SOI substrate. The structure of the APD was designed as separate-absorption-charge-multiplication (SACM) using germanium and silicon as absorption region and multiplication region, respectively. The breakdown voltage (V b) of such a device is 19 V at reverse bias and dark current appears to be 0.71 μA at 90% of the V b. The device with a 10-μm length and 7-μm width of Ge layer shows a maximum 3-dB bandwidth of 17.8 GHz at the wavelength of 1550 nm. For the device with a 30-μm-length Ge region, gain-bandwidth product achieves 325 GHz.