Pressureless sintering of beta silicon carbide nanoparticles
Pressureless sintering of beta silicon carbide nanoparticles
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DOI：
10.1016/j.jeurceramsoc.2012.06.008
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发表时间：
2012-12
影响因子：
5.7
通讯作者：
A. Malinge;A. Coupé;Y. Petitcorps;R. Pailler
中科院分区：
文献类型：
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作者：
A. Malinge;A. Coupé;Y. Petitcorps;R. Pailler
本文报道了立方相碳化硅纳米颗粒（β-SiC）的无压烧结。采用纳米SiC粉、短效粘结剂和烧结剂B4 C制备了绿色复合材料。在低温（例如800°C）下除去粘合剂，并在1900和2100°C之间研究无压烧结。在2100°C下30分钟后获得接近理论密度（98%相对密度）。在热处理过程中的组织和显微组织的演变进行了表征。烧结所需的高温导致β-SiC向α-SiC的转变，这通过复合材料显微结构的变化来揭示。从1900°C开始，致密的样品由β-SiC晶粒以明确的取向包围α-SiC片晶组成。TEM研究和烧结活化能的计算提供了洞察致密化机制。
This study reports the pressureless sintering of cubic phase silicon carbide nanoparticles (β-SiC). Green blended compounds made of SiC nano-sized powder, a fugitive binder and a sintering agent (boron carbide, B4C), have been prepared. The binder is removed at low temperature (e.g. 800°C) and the pressureless sintering studied between 1900 and 2100°C. The nearly theoretical density (98% relative density) was obtained after 30min at 2100°C. The structural and microstructural evolutions during the heat treatment were characterised. The high temperatures needed for the sintering result in the β-SiC to α-SiC transformation which is revealed by the change of the composite microstructure. From 1900°C, dense samples are composed of β-SiC grains surrounding α-SiC platelets in a well-defined orientation. TEM investigations and calculation of the activation energy of the sintering provided insight to the densification mechanism.