Thermal performance of sputtered insoluble Cu(W) films for advanced barrierless metallization
Thermal performance of sputtered insoluble Cu(W) films for advanced barrierless metallization
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DOI：
10.1007/s11664-006-0187-9
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发表时间：
2006
影响因子：
2.1
通讯作者：
J. Chu;C. Lin;Y. Y. Hsieh-Y.
中科院分区：
文献类型：
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作者：
J. Chu;C. Lin;Y. Y. Hsieh-Y.
通过聚焦离子束、X 射线衍射和电阻率测量的分析，研究了无阻挡层 Si 衬底上溅射稀不溶性 W (1.3 at.%) 的铜薄膜的热性能。基于不同温度下的热循环和等温退火的热性能评估，已经证实了 Cu(W) 薄膜作为种子层的作用。 Cu/Cu(W) 薄膜在 400°C 热退火后获得~1.8 µΩ-cm 的电阻率。由于具有良好的热稳定性，Cu(W) 籽晶层也被认为充当扩散缓冲层，并且对于无势垒 Si 方案在高达 490°C 的温度下保持稳定。结果表明，Cu/Cu(W)方案在先进的无阻挡层金属化应用中具有潜力。
The thermal performance of sputtered Cu films with dilute insoluble W (1.3 at.%) on barrierless Si substrates has been studied, using the analyses of focused ion beam, x-ray diffraction, and electrical resistivity measurement. The role of the Cu(W) film as a seed layer has been confirmed based on the thermal performance evaluations in both thermal cycling and isothermal annealing at various temperatures. The electrical resistivity of ∼1.8 µΩ-cm for Cu/Cu(W) film is obtained after thermal annealing at 400°C. Because of the good thermal stability, the Cu(W) seed layer is also considered to act as a diffusion buffer and is stable up to 490°C for the barrierless Si scheme. The results indicate that the Cu/Cu(W) scheme has potential in advanced barrierless metallization applications.