Van der Waals epitaxy of GaN-based light-emitting diodes on wet-transferred multilayer graphene film
Van der Waals epitaxy of GaN-based light-emitting diodes on wet-transferred multilayer graphene film
复制标题
湿法转移多层石墨烯薄膜上 GaN 基发光二极管的范德华外延
DOI：
10.7567/jjap.56.085506
复制
发表时间：
2017-08-01
影响因子：
1.5
通讯作者：
Li, Jimin
中科院分区：
文献类型：
--
作者：
Li, Yang;Zhao, Yun;Li, Jimin
实验研究了利用多层石墨烯解决蓝宝石和氮化物之间的大失配问题的可能性，并进一步研究了多层石墨烯中间层对LED光电性能的影响。对于随后在AlN上生长3微米厚的GaN，多层石墨烯有助于释放应力并有效地消除裂纹。此外，多层石墨烯增加了衬底表面的衍射，这是从400-900 nm波长范围内光学透过率光谱的增加确定的。尽管含多层石墨烯的GaN的结晶质量略有下降，但生长在多层石墨烯上的发光二极管仍显示出比传统蓝宝石上生长的更高的输出功率。目前的研究结果表明，多层石墨烯作为一种潜在的衬底具有很大的吸引力，可以用于外延生长III-氮化物以降低应力，并可以改善背光提取作为粗糙层来提高外量子效率。
We experimentally investigated the possibility of using multilayer graphene to solve large mismatch problems between sapphire and nitride and further studied the effects of a multilayer graphene interlayer on the optical and electrical properties of LEDs. For the subsequent growth of 3-µm-thick GaN on AlN, multilayer graphene helps release stress and effectively removes cracks. In addition, multilayer graphene increases the diffraction of the substrate surface as determined from the increase in optical transmittance spectra in the wavelength range of 400–900 nm. Although the crystalline quality of GaN with multilayer graphene is slightly decreased, LEDs grown on multilayer graphene still show a higher output power than those grown on conventional sapphire. The present findings showed that the multilayer graphene layer is attractive as a potential substrate for the epitaxial growth of III–nitride to reduce stress and it could improve back light extraction as a rough layer to increase external quantum efficiency.