Cathodoluminescence study of radiative interface defects in thermally grown SiO2/4H-SiC(0001) structures
Cathodoluminescence study of radiative interface defects in thermally grown SiO2/4H-SiC(0001) structures
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DOI：
10.1063/1.4923470
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发表时间：
2015-06-29
影响因子：
4
通讯作者：
Watanabe, Heiji
中科院分区：
文献类型：
--
作者：
Fukushima, Yuta;Chanthaphan, Atthawut;Watanabe, Heiji
本文用阴极发光光谱研究了热生长SiO_2/4 H-SiC（0001）结构中的辐射缺陷及其深度分布。结果发现，虽然观察到的发光峰归因于氧空位和非桥接氧空穴中心从热氧化物生长在（0001）Si面和C面表面与热氧化物在Si上，强烈的黄色发光波长约为600 nm的识别仅从氧化物界面上的Si面基板上，无论氧化物的厚度和掺杂剂类型。基于Si骨架结构的可见光发射，讨论了位于几nm厚的氧化物界面附近的辐射中心的可能物理起源。(C)2015 AIP Publishing LLC.
Radiative defects in thermally grown SiO2/4H-SiC(0001) structures and their location in depth were investigated by means of cathodoluminescence spectroscopy. It was found that while luminescence peaks ascribed to oxygen vacancy and nonbridging oxygen hole centers were observed both from thermal oxides grown on (0001) Si-face and C-face surfaces as with thermal oxides on Si, intense yellow luminescence at a wavelength of around 600 nm was identified only from the oxide interface on the Si-face substrate regardless of the oxide thickness and dopant type. Possible physical origins of the radiative centers localized near an oxide interface of a few nm thick are discussed on the basis of visible light emission from Si backbone structures. (C) 2015 AIP Publishing LLC.