Reactive Force-Field Molecular Dynamics Simulations of the Silicon-Germanium Deposition Process for the Semiconductor Manufacturing
Reactive Force-Field Molecular Dynamics Simulations of the Silicon-Germanium Deposition Process for the Semiconductor Manufacturing
复制标题
半导体制造硅锗沉积过程的反作用力场分子动力学模拟
DOI:
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发表时间:
2020
期刊:
影响因子:
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通讯作者:
and T. Tokumasu
中科院分区:
文献类型:
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作者:
N. Uene;T. Mabuchi;M. Zaitsu;S. Yasuhara;and T. Tokumasu