Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large endurance
Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large endurance
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DOI：
10.1063/1.4864396
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发表时间：
2014-02-10
影响因子：
4
通讯作者：
Tseng, Tseung-Yuen
中科院分区：
文献类型：
--
作者：
Huang, Chun-Yang;Huang, Chung-Yu;Tseng, Tseung-Yuen
本文研究了在ZrO_2/HfO_2双层阻性随机存储器结构中双形成过程的机理。用能带图可以很好地解释这种由界面层形成引起的现象。在第一次形成过程中，当施加负电压时，TiN界面层将成为隧道势垒，而当施加正电压时，TiN界面层将击穿。此外，由于双重成型工艺，在器件中形成了尺寸较窄的非对称导电丝。导电丝的形成和断裂点可以限制在ZrO_2/HfO_2界面上，在耐久试验中会抑制氧离子的消耗。因此，这种器件结构具有高速度(40 Ns)和大耐久(10(7)周期)的特性。(C)2014 AIP出版有限责任公司。
In this Letter, the mechanism of double forming process phenomenon revealing in ZrO2/HfO2 bilayer resistive random access memory structure is investigated. This phenomenon caused by the formation of TiON interfacial layer can be well explained by using the energy band diagram. The TiON interfacial layer will be a tunneling barrier during the first forming process when a negative voltage applied on the device, while it will breakdown when applying a positive voltage. Besides, due to the double forming process, an asymmetric conductive filament with narrower size at ZrO2/HfO2 interface is formed in the device. The point for formation and rupture of the conductive filament can be confined at the ZrO2/HfO2 interface, and it will suppress the consumption of oxygen ions during endurance test. Therefore, high speed (40 ns) and large endurance (10(7) cycles) characteristics are achieved in this device structure. (C) 2014 AIP Publishing LLC.