Experimental demonstration of pseudomorphic heterojunction bipolar transistors with cutoff frequencies above 600GHz
Experimental demonstration of pseudomorphic heterojunction bipolar transistors with cutoff frequencies above 600GHz
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截止频率超过600GHz的赝晶异质结双极晶体管的实验演示
DOI：
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发表时间：
2005
期刊：
影响因子：
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通讯作者：
M. Feng
中科院分区：
文献类型：
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作者：
W. Hafez;M. Feng
本文报道了赝晶型InP_xInGaAs异质结双极晶体管（PHBTs），该晶体管采用组分渐变的集电极（10%铟渐变）和渐变的基极（6%铟渐变）来减少器件的渡越时间。0.4×6μm2 HBT在集电极电流密度为16.8mA·cm ~（-2）时，获得了604 GHz的最大击穿电压，直流增益为65，击穿电压为1.7V。
Pseudomorphic InP∕InGaAs heterojunction bipolar transistors (PHBTs) using a compositionally graded collector (10% indium grading) and graded base (6% indium grading) to reduce the transit time of the device are reported. A 0.4×6μm2 HBT achieves excellent ƒT values of 604GHz (associated ƒMAX=246GHz) at a collector current density of 16.8mA∕μm2, with a dc gain of 65 and a breakdown voltage of BVCEO=1.7V.