Resistive switching memory effects in p-type hydrogen-treated CuO nanowire
Resistive switching memory effects in p-type hydrogen-treated CuO nanowire
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DOI：
10.1063/5.0010839
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发表时间：
2020-07-27
影响因子：
4
通讯作者：
Nomura, Kenji
中科院分区：
文献类型：
--
作者：
Huang, Chi-Hsin;Tang, Yalun;Nomura, Kenji
基于纳米线（NW）的阻变器件为开发下一代存储器和计算的纳米级忆阻器件提供了一个理想的平台。本研究发展了一种p型氢处理氧化铜纳米线存储器件，采用氢退火。经氢处理的CuO NW（主要由Cu 2 O组成）表现出电阻开关非易失性存储效应，并展示出类似于3 × 10（6）V/m的低电场器件操作和高达10（7）的高开/关比。提出了基于CuO氧化还原反应的空穴导电路径形成/断裂机制作为电阻开关机制。
Nanowire (NW)-based resistive switching device offers an ideal platform to develop a nanoscale-memristive device for next-generation memory and computing. The present study developed a p-type hydrogen-treated CuO NW memory device by using hydrogen annealing. The hydrogen-treated CuO NW, which is mainly composed of Cu2O, exhibited a resistive switching non-volatile memory effect and demonstrated low electric-field device operation with similar to 3x10(6) V/m and high ON/OFF ratio up to 10(7). The hole conduction path formation/rapture mechanism based on the redox reaction of CuO was proposed as a resistive switching mechanism.