Heterojunction DDR THz IMPATT diodes based on AlxGa1-xN/GaN material system
Heterojunction DDR THz IMPATT diodes based on AlxGa1-xN/GaN material system
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DOI：
10.1088/1674-4926/36/6/064002
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发表时间：
2015-06-01
影响因子：
5.1
通讯作者：
Mitra, Monojit
中科院分区：
文献类型：
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作者：
Banerjee, Suranjana;Mitra, Monojit
对基于 AlxGa1-xN/GaN 材料系统的异质结双漂移区 (DDR) 冲击雪崩渡越时间 (IMPATT) 二极管的大信号射频性能和雪崩噪声特性进行了仿真研究，设计工作频率为 1.0 THz。本研究提出了两种不同的异质结DDR结构，例如n-Al-0.4 Ga0.6N/p-GaN和n-GaN/p-Al-0.4 Ga-0.6 N。将异质结DDR IMPATT的大信号输出功率、转换效率和噪声特性与基于GaN和Al-0.4 Ga-0.6 N的同质结DDR IMPATT器件进行比较。结果表明，n-Al-0.4 Ga0.6N/p-GaN异质结DDR器件不仅优于n-GaN/p-Al-0.4 Ga-0.6 N DDR器件，而且优于基于GaN和Al-0.4 Ga-0.6 N的同质结DDR IMPATT器件。 GaN 和 Al-0.4 Ga-0.6 N 的大信号转换效率、功率输出和 1.0 THz 下的雪崩噪声性能。
Simulation studies are made on the large-signal RF performance and avalanche noise properties of heterojunction double-drift region (DDR) impact avalanche transit time (IMPATT) diodes based on AlxGa1-xN/GaN material system designed to operate at 1.0 THz frequency. Two different heterojunction DDR structures such as n-Al-0.4 Ga0.6N/p-GaN and n-GaN/p-Al-0.4 Ga-0.6 N are proposed in this study. The large-signal output power, conversion efficiency and noise properties of the heterojunction DDR IMPATTs are compared with homojunction DDR IMPATT devices based on GaN and Al-0.4 Ga-0.6 N. The results show that the n-Al-0.4 Ga0.6N/p-GaN heterojunction DDR device not only surpasses the n-GaN/p-Al-0.4 Ga-0.6 N DDR device but also homojunction DDR IMPATTs based on GaN and Al-0.4 Ga-0.6 N as regards large-signal conversion efficiency, power output and avalanche noise performance at 1.0 THz.