Thin-Layer Ablation of Metals and Silicon by Femtosecond Laser Pulses for Application to Surface Analysis
Thin-Layer Ablation of Metals and Silicon by Femtosecond Laser Pulses for Application to Surface Analysis
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通过飞秒激光脉冲对金属和硅进行薄层烧蚀，用于表面分析
DOI：
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发表时间：
2000
期刊：
影响因子：
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通讯作者：
M. Maeda
中科院分区：
文献类型：
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作者：
M. Kim;T. Takao;Y. Oki;M. Maeda
为了进行薄层表面分析，比较了用24 ns ArF激光脉冲193 nm和150 ps钛宝石激光脉冲780 nm对从金属到半导体样品的激光烧蚀。与纳秒激光脉冲相比，飞秒激光脉冲的烧蚀阈值可以显著降低。特别是，硅样品的阈值被降低到大约一个数量级，在阈值注量以上5%时，获得了0.48 nm/炮的烧蚀率。烧蚀表面粗糙度的均方根(RMS)增长率为0.05 nm/炮。这些结果显示了飞秒激光烧蚀结合激光诱导荧光(LIF)光谱用于多种材料的痕量元素分析的优势。
For the purpose of thin-layer surface analysis, comparison of laser ablation by 24 ns ArF laser pulses at 193 nm and that by 150 fs Ti:sapphire laser pulses at 780 nm for samples ranging from metals to semiconductors is reported. In contrast to nanosecond laser pulses, the ablation threshold for femtosecond laser pulses could be reduced significantly. In particular, the threshold for a Si sample was reduced to about one order of magnitude, and an ablation rate of 0.48 nm/shot was obtained at 5% above the threshold fluence. The root-mean-square (RMS) growth rate in the roughness of the ablated surface was 0.05 nm/shot. These results show the advantages of femtosecond laser ablation for trace element analysis of a wide range of materials, coupled with laser-induced fluorescence (LIF) spectroscopy.