Growth and characterisation of NiSb(0001)/GaAs(111)B epitaxial films
Growth and characterisation of NiSb(0001)/GaAs(111)B epitaxial films
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DOI：
10.1016/j.jcrysgro.2012.07.010
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发表时间：
2012-10-15
影响因子：
1.8
通讯作者：
Bell, Gavin R.
中科院分区：
文献类型：
--
作者：
Aldous, James D.;Burrows, Christopher W.;Bell, Gavin R.
利用分子束外延技术在GaAs（111）B衬底上生长了NiSb（0001）薄膜，并利用密度泛函理论计算支持的各种结构和表面特异性技术对其进行了表征。在NiSb和更广泛研究的MnSb之间观察到一些差异。在NiSb（0001）上观察到新的（4 x 4）表面重建，沿着MnSb或MnAs常见的其他重建。NiSb和MnSb之间的应变弛豫不同，在NiSb中存在10 nm厚的应变层，并且在厚（0001）膜中出现（1（1）over bar 01）取向的一些微晶。Ga通过NiSb（0001）膜的偏析不发生，不像MnSb，并且NiSb的天然氧化物比MnSb的富Mn氧化物更良性。(C)2012爱思唯尔有限公司版权所有。
Thin films of NiSb(0001) have been grown using molecular beam epitaxy on GaAs(111)B substrates and characterized with a variety of structural and surface-specific techniques supported by density functional theory calculations. Several differences were observed between NiSb and the more widely studied MnSb. A new (4 x 4) surface reconstruction was seen on NiSb(0001), along with other reconstructions common to MnSb or MnAs. Strain relaxation differs between NiSb and MnSb, with strained layers 10 nm thick persisting in NiSb and some crystallites of (1 (1) over bar 01) orientation appearing in thick (0001) films. Ga segregation through NiSb(0001) films does not occur, unlike in MnSb, and the native oxide of NiSb is more benign than the Mn-rich oxides of MnSb. (C) 2012 Elsevier B.V. All rights reserved.