Integrated Magnetic Loop Probe in GaAs Technology for Active Near-Field Sensor
Integrated Magnetic Loop Probe in GaAs Technology for Active Near-Field Sensor
复制标题
用于有源近场传感器的 GaAs 技术集成磁环探头
DOI：
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发表时间：
2008
期刊：
影响因子：
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通讯作者：
A. Thiede
中科院分区：
文献类型：
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作者：
N. Uddin;M. Spang;A. Thiede
本文报道了OMMIC ED02AH GaAs工艺中微型矩形环的设计、模拟和测量。该环路旨在与其他有源电路集成在芯片上，用于印刷电路板（PCB）以及大规模集成（LSI）电路的近场扫描。我们的目标频率范围是从1 MHz到3 GHz，并计划扩展到10 GHz。电磁（EM）场模拟结果，从两个模拟器，以及在晶圆上的测量结果。提出了一种利用通孔和背面金属化的新型矩形环结构。
This paper reports on design, simulation and measurement of miniature rectangular loops in OMMIC ED02AH GaAs technology. The loops are intended for integration on chip with other active circuitry for near-field scanning of printed circuit boards (PCB) as well as large scale integrated (LSI) circuits. Our target frequency range is from 1 MHz to 3 GHz and is planned to extend up to 10 GHz. Electromagnetic (EM) field simulation results from two simulators as well as on-wafer measurement results are presented. A new rectangular loop structure using the via-hole and backside metallization is proposed.