Epitaxial Graphene on Cu(111)
Epitaxial Graphene on Cu(111)
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DOI：
10.1021/nl1016706
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发表时间：
2010-09-01
期刊：
影响因子：
10.8
通讯作者：
Guisinger, Nathan P.
中科院分区：
文献类型：
--
作者：
Gao, Li;Guest, Jeffrey R.;Guisinger, Nathan P.
首次在超高真空室内通过乙烯热分解实现了单晶Cu(111)上石墨烯的生长。通过扫描隧道显微镜和光谱法研究了 Cu(111) 上石墨烯的结构和电子性质。已经观察到单层岛的成核和两个主要的域方向，这导致形成大量域边界并增加覆盖范围。这些结果表明，降低畴界密度是在铜上生长高质量石墨烯的挑战之一。
The growth of graphene on single crystal Cu(111) has been achieved by thermal decomposition of ethylene in an ultrahigh vacuum chamber for the first time. The structural and electronic properties of graphene on Cu(111) have been investigated by scanning tunneling microscopy and spectroscopy. The nucleation of monolayer islands and two predominant domain orientations have been observed, which lead to the formation of numerous domain boundaries with increasing coverage. These results reveal that reducing the density of domain boundaries is one challenge of growing high-quality graphene on copper.