Probing the sensitivity of electron wave interference to disorder-induced scattering in solid-state devices
Probing the sensitivity of electron wave interference to disorder-induced scattering in solid-state devices
复制标题
探讨电子波干扰对固态器件中无序引起的散射的敏感性
DOI：
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
Nottingham
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文献类型：
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作者：
B. Scannell;I. Pilgrim;A. See;R. Montgomery;P. Morse;M. Fairbanks;C. A. Marlow;H. Linke;I. Farrer;D. Ritchie;A. Hamilton;A. Micolich;L. Eaves;R. L. O. Physics;U. Oregon;Eugene;Or;Usa;S. O. Physics;U. Wales;Sydney;Nsw;Australia.;D. Physics;Nanometer Structure Consortium;L. University;Lund;Sweden.;D. Physics;C. Laboratory;Cambridge;UK.;Astronomy;U. Nottingham;Nottingham
半导体台球中电子运动的研究阐明了我们对量子干涉和量子混沌的理解。核心假设是电离的施主只对电子轨迹产生微小的扰动，这是由台球壁的散射决定的。我们使用的量子干涉的探针的磁导波动，并表明，这些波动从根本上改变时，散射景观修改由热诱导的电荷之间的位移施主网站。我们的结果挑战了纳米结构中量子干涉效应的公认理解。
The study of electron motion in semiconductor billiards has elucidated our understanding of quantum interference and quantum chaos. The central assumption is that ionized donors generate only minor perturbations to the electron trajectories, which are determined by scattering from billiard walls. We use magnetoconductance fluctuations as a probe of the quantum interference and show that these fluctuations change radically when the scattering landscape is modified by thermally induced charge displacement between donor sites. Our results challenge the accepted understanding of quantum interference effects in nanostructures.