Surface Diffusion Length of Gallium during MBE Growth on the Various Misoriented GaAs(001) Substrates
Surface Diffusion Length of Gallium during MBE Growth on the Various Misoriented GaAs(001) Substrates
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DOI：
10.1143/jjap.28.1212
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发表时间：
1989-07
影响因子：
1.5
通讯作者：
T. Shitara;T. Nishinaga
中科院分区：
文献类型：
--
作者：
T. Shitara;T. Nishinaga
本文对GaAs分子束外延的二维成核和表面扩散理论进行了扩展，考虑了砷和镓的表面扩散。在GaAs（001）衬底上进行了MBE实验，这些衬底是从（001）向[110]、[1 - 10]或[100]取向的。通过测量RHEED强度振荡开始出现的临界温度，得到了模式转变的临界条件。利用现有的理论和实验数据，对镓的表面扩散长度进行了估算，并对镓的各向异性行为的成因进行了讨论。
The previous theoretical work on MBE of GaAs, which is based on the 2D-nucleation and surface diffusion, has been expanded to take into account the surface diffusion of arsenic as well as that of gallium. MBE experiments were carried out on the GaAs(001) substrates which were misoriented from (001) toward [110], [1̄10], or [100]. By measuring the critical temperature at which RHEED intensity oscillation begins to appear, the critical conditions for the mode transition were obtained. With the present theory and the experimental data, the surface diffusion length of gallium is evaluated and the origin of its anisotropic behavior of gallium is discussed.