Hot carrier aging and its variation under use-bias: Kinetics, prediction, impact on Vdd and SRAM

Hot carrier aging and its variation under use-bias: Kinetics, prediction, impact on Vdd and SRAM
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DOI:
10.1109/iedm.2015.7409742
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发表时间:
2015-12
期刊:
2015 IEEE International Electron Devices Meeting (IEDM)
影响因子:
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通讯作者:
M. Duan;J. F. Zhang;A. Manut;Z. Ji;W. Zhang;A. Asenov;L. Gerrer;D. Reid;H. Razaidi;D. Vigar;V. Chandra;R. Aitken;B. Kaczer;G. Groeseneken
M. Duan;J. F. Zhang;A. Manut;Z. Ji;W. Zhang;A. Asenov;L. Gerrer;D. Reid;H. Razaidi;D. Vigar;V. Chandra;R. Aitken;B. Kaczer;G. Groeseneken
中科院分区:
其他
文献类型:
--
作者:
M. Duan;J. F. Zhang;A. Manut;Z. Ji;W. Zhang;A. Asenov;L. Gerrer;D. Reid;H. Razaidi;D. Vigar;V. Chandra;R. Aitken;B. Kaczer;G. Groeseneken

文献摘要

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随着CMOS规模缩小,热载流子老化(HCA)规模扩大,并且可能再次成为限制老化过程。这促使重新访问HCA,但最近的作品都集中在加速HCA提高压力偏见,并有很少的信息下使用偏见的HCA。早期的研究提出了高偏倚和低偏倚下的HCA机制是不同的,质疑高偏倚数据是否可以用于预测使用偏倚下的HCA。这项工作的一个关键进展是提出了一种新的方法来评估使用偏倚下HCA引起的变化。首次从实验上验证了该方法预测使用偏置下HCA的能力。证明了RTN与HCA分离的重要性。指出了商用源测量单元(SMU)测量的HCA给出了错误的幂指数。所提出的方法最大限度地减少了测试数量,并且模型仅需要3个拟合参数,因此易于实施。
As CMOS scales down, hot carrier aging (HCA) scales up and can be a limiting aging process again. This has motivated re-visiting HCA, but recent works have focused on accelerated HCA by raising stress biases and there is little information on HCA under use-biases. Early works proposed that HCA mechanism under high and low biases are different, questioning if the high-bias data can be used for predicting HCA under use-bias. A key advance of this work is proposing a new methodology for evaluating the HCA-induced variation under use-bias. For the first time, the capability of predicting HCA under use-bias is experimentally verified. The importance of separating RTN from HCA is demonstrated. We point out the HCA measured by the commercial Source-Measure-Unit (SMU) gives erroneous power exponent. The proposed methodology minimizes the number of tests and the model requires only 3 fitting parameters, making it readily implementable.