Investigation on the dominant key to achieve superior Ge surface passivation by GeO x based on the ozone oxidation
Investigation on the dominant key to achieve superior Ge surface passivation by GeO x based on the ozone oxidation
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DOI：
10.1016/j.apsusc.2015.09.084
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发表时间：
2015-12
影响因子：
6.7
通讯作者：
Xiaolei Wang;J. Xiang;Wenwu Wang;Y. Xiong;Jing Zhang;Chao Zhao
中科院分区：
文献类型：
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作者：
Xiaolei Wang;J. Xiang;Wenwu Wang;Y. Xiong;Jing Zhang;Chao Zhao
在臭氧氧化的基础上，研究了geox2界面层实现优异锗表面钝化的关键。低温导电法测得的界面态密度（Dit）随着geox厚度（0.26 ~ 1.06 nm）的增加而减小。利用x射线光电子能谱（XPS）表征了不同厚度的GeOx/Ge的界面结构。XPS结果表明，Ge3+的氧化物组分有效钝化了锗悬空键，从而降低了dti。因此，形成Ge3+元件是实现低ditfor Ge栅极叠层的关键。我们的工作证实，无论采用何种氧化方法生长geox2界面层，相同的物理机制都决定了geox2的表面钝化。因此，探索一种能够在尽可能薄的GeOxinterlayer中实现足够的Ge3+组分的生长工艺对于同时实现等效氧化层厚度结垢和优越的界面性能具有重要意义。这一结论有助于Ge栅极电路的优化设计。
The dominant key to achieve superior Ge surface passivation by GeOxinterfacial layer is investigated based on ozone oxidation. The interface state density (Dit) measured from low temperature conduction method is found to decrease with increasing the GeOxthickness (0.26–1.06 nm). The X-ray photoelectron spectroscopy (XPS) is employed to demonstrate the interfacial structure of GeOx/Ge with different GeOxthicknesses. And the XPS results show that Ge3+oxide component is responsible to the decrease of theDitdue to the effective passivation of Ge dangling bonds. Therefore, the formation of Ge3+component is the dominant key to achieve lowDitfor Ge gate stacks. Our work confirms that the same physical mechanism determines the Ge surface passivation by the GeOxregardless of the oxidation methods to grow the GeOxinterfacial layer. As a result, to explore a growth process that can realize sufficient Ge3+component in the GeOxinterlayer as thin as possible is important to achieve both equivalent oxide thickness scaling and superior interfacial property simultaneously. This conclusion is helpful to engineer the optimization of the Ge gate stacks.